The 1N6065B is a silicon bidirectional transient voltage suppressor diode with a maximum reverse voltage of 132V and a maximum non-repetitive peak reverse power dissipation of 1500mW. It features a DO-13 axial package with a pin count of 2 and is suitable for use in applications requiring transient voltage suppression. The diode has a maximum power dissipation of 1W and is constructed with a silicon diode element material. Operating temperature range is not specified.
PolarityBIDIRECTIONAL
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Technical Specifications
Littelfuse 1N6065B technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-13 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 95 |
| Breakdown Voltage-Min | 108 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 132 |
| Power Dissipation-Max | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse 1N6065B Datasheet
Download the complete datasheet for Littelfuse 1N6065B to view detailed technical specifications.
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