The 1N6070T is a silicon bidirectional transient voltage suppressor diode with a breakdown voltage range of 171 to 210 volts and a maximum power dissipation of 1 watt. It has a DO-13 axial package with a terminal position of axial. The diode is made of silicon and has a non-repetitive peak reverse power dissipation of 1500 watts. It is suitable for use in a variety of applications requiring transient voltage suppression.
PolarityBIDIRECTIONAL
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Technical Specifications
Littelfuse 1N6070T technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-13 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 171 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 210 |
| Power Dissipation-Max | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse 1N6070T Datasheet
Download the complete datasheet for Littelfuse 1N6070T to view detailed technical specifications.
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