N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 30A continuous collector current (I(C)) and a 3000V collector-emitter breakdown voltage (V(BR)CES). This discrete semiconductor component is housed in a TO-247 plastic package with three terminals, designed for single terminal positioning. It operates efficiently up to a maximum temperature of 150°C and contains a single element.
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Technical Specifications
Littelfuse IXBH12N300 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Littelfuse IXBH12N300 Datasheet
Download the complete datasheet for Littelfuse IXBH12N300 to view detailed technical specifications.
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