High-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Features a robust construction for reliable operation. Optimized for high current handling and fast switching speeds. Ideal for demanding power electronics circuits.
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Technical Specifications
Littelfuse IXBH16N170 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXBH16N170 Datasheet
Download the complete datasheet for Littelfuse IXBH16N170 to view detailed technical specifications.
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