High-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Features a robust construction for reliable operation. Optimized for low conduction losses and fast switching speeds. Ideal for demanding power electronics circuits requiring high current handling capabilities.
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Technical Specifications
Littelfuse IXBH2N250 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXBH2N250 Datasheet
Download the complete datasheet for Littelfuse IXBH2N250 to view detailed technical specifications.
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