High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 300V collector-emitter voltage rating and a continuous collector current capability of 55A. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Ideal for power conversion, motor control, and industrial power supplies.
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Technical Specifications
Littelfuse IXBK55N300 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXBK55N300 Datasheet
Download the complete datasheet for Littelfuse IXBK55N300 to view detailed technical specifications.
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