High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a high collector-emitter voltage rating of 1700V and a continuous collector current capability of 75A. Optimized for low conduction losses and fast switching speeds, ensuring efficient operation. Ideal for use in high-power inverters, motor drives, and renewable energy systems.
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Technical Specifications
Littelfuse IXBK75N170 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXBK75N170 Datasheet
Download the complete datasheet for Littelfuse IXBK75N170 to view detailed technical specifications.
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