IXFK80N60P3

N-channel Power MOSFET featuring a low on-resistance of 0.045 Ohms at 100A, enabling efficient power handling. Designed for high-current applications with a continuous drain current rating of 100A and a pulsed drain current capability of 320A. Operates with a gate-source voltage of 10V and a drain-source voltage of 600V, providing robust voltage blocking. Offers a low gate charge of 120nC for fast switching speeds.