IXFY26N30X3

N-channel Power MOSFET featuring a low on-resistance of 0.095 Ohms at 25°C and a continuous drain current of 26A. Designed for high-efficiency power switching applications, this device offers a maximum drain-source voltage of 300V and a gate-source voltage range of ±20V. It boasts a low gate charge (Qg) of 65nC, facilitating faster switching speeds. The MOSFET operates within a temperature range of -55°C to 150°C.