N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. Features a continuous collector current of 32A and a collector-emitter voltage rating of 1700V. Packaged in a TO-268AA (D3PAK-3) surface-mount package with a maximum operating temperature of 150°C. This single-element device offers two terminals for efficient power switching.
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Technical Specifications
Littelfuse IXGH16N170 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-268AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Littelfuse IXGH16N170 Datasheet
Download the complete datasheet for Littelfuse IXGH16N170 to view detailed technical specifications.
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