N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1700V collector-emitter voltage (V(BR)CES) and a 75A continuous collector current (I(C)). This discrete semiconductor component is housed in a TO-247AD plastic package with three terminals, designed for single terminal positioning. Maximum operating temperature reaches 150°C, with one element per package.
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Technical Specifications
Littelfuse IXGH32N170 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247AD |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Littelfuse IXGH32N170 Datasheet
Download the complete datasheet for Littelfuse IXGH32N170 to view detailed technical specifications.
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