N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1700V collector-emitter voltage (V(BR)CES) and a 170A continuous collector current (I(C)). This discrete semiconductor component is housed in a TO-264AA package with 3 terminals, designed for single terminal positioning. It operates with a maximum junction temperature of 150°C and contains a single element.
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Technical Specifications
Littelfuse IXGK100N170 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-264AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Littelfuse IXGK100N170 Datasheet
Download the complete datasheet for Littelfuse IXGK100N170 to view detailed technical specifications.
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