High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 1200V collector-emitter voltage (Vce) and a continuous collector current (Ic) rating of 120A. Optimized for low conduction losses and fast switching speeds, ensuring efficient operation. Ideal for power supplies, motor drives, and inverters requiring reliable and high-efficiency power conversion.
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Technical Specifications
Littelfuse IXGK120N120A3 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXGK120N120A3 Datasheet
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