N-channel enhancement mode power MOSFET in a TO-220 package, featuring a maximum drain-source voltage of 250V and a continuous drain current of 76A. This single-element transistor utilizes TrenchFET process technology and offers a low drain-source on-resistance of 44mOhm at 10V. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Littelfuse IXTP76N25T technical specifications.
General
| Package/Case | TO-220 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.66(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.15(Max) |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 76A |
| Maximum Drain Source Resistance | 44@10VmOhm |
| Typical Gate Charge @ Vgs | 92@10VnC |
| Typical Gate Charge @ 10V | 92nC |
| Typical Input Capacitance @ Vds | 4920@25VpF |
| Maximum Power Dissipation | 460000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 75915 |
| EU RoHS | Yes with Exemption |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Littelfuse IXTP76N25T Datasheet
Download the complete datasheet for Littelfuse IXTP76N25T to view detailed technical specifications.
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