IXTX40P50P

N-channel Power MOSFET featuring a low on-resistance of 0.018 Ohms at 10V VGS, enabling efficient power switching. Designed for high current applications with a continuous drain current of 40A and a pulsed drain current of 160A. Operates with a drain-source voltage of 500V and a gate-source voltage range of ±20V. Offers a maximum power dissipation of 300W, suitable for demanding power management tasks.