N-channel Power MOSFET featuring a low on-resistance of 1.6 ohms and a continuous drain current capability of 6.5 amps. Designed for high-efficiency switching applications, this device offers a maximum drain-source voltage of 500 volts. Its robust construction ensures reliable performance in demanding power management circuits.
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Technical Specifications
Littelfuse IXTY1R6N50D2 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXTY1R6N50D2 Datasheet
Download the complete datasheet for Littelfuse IXTY1R6N50D2 to view detailed technical specifications.
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