High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 650V collector-emitter voltage and 110A continuous collector current. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Designed for demanding power electronic applications requiring robust performance and thermal management.
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Technical Specifications
Littelfuse IXXN110N65C4H1 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXXN110N65C4H1 Datasheet
Download the complete datasheet for Littelfuse IXXN110N65C4H1 to view detailed technical specifications.
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