High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a 650V collector-emitter voltage and a continuous collector current of 200A. Optimized for low conduction losses and fast switching speeds, ensuring efficient operation. Ideal for use in power supplies, motor drives, and renewable energy systems.
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Technical Specifications
Littelfuse IXXX200N65B4 technical specifications.
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXXX200N65B4 Datasheet
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