High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 600V breakdown voltage and a continuous collector current rating of 300A. Optimized for low on-state voltage and fast switching speeds, ensuring efficient power conversion. Ideal for use in high-power inverters, motor drives, and power supplies.
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Technical Specifications
Littelfuse IXXX300N60B3 technical specifications.
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Littelfuse IXXX300N60B3 Datasheet
Download the complete datasheet for Littelfuse IXXX300N60B3 to view detailed technical specifications.
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