High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a robust 900V breakdown voltage and a continuous collector current rating of 140A. Optimized for efficient switching applications, this device offers low on-state voltage drop and fast switching speeds. Its advanced trench gate technology ensures excellent power handling capabilities and thermal performance.
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Technical Specifications
Littelfuse IXYK140N90C3 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXYK140N90C3 Datasheet
Download the complete datasheet for Littelfuse IXYK140N90C3 to view detailed technical specifications.
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