High-voltage Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Features a 250V collector-emitter voltage (Vce) and a continuous collector current (Ic) rating of 25A. Offers low on-state voltage (Vce(sat)) for reduced conduction losses and fast switching speeds for improved efficiency. Ideal for power conversion, motor control, and high-frequency switching circuits.
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Technical Specifications
Littelfuse IXYT25N250CHV technical specifications.
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXYT25N250CHV Datasheet
Download the complete datasheet for Littelfuse IXYT25N250CHV to view detailed technical specifications.
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