High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 250V collector-emitter voltage and 40A continuous collector current. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Designed for demanding power electronics applications requiring robust performance and reliability.
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Technical Specifications
Littelfuse IXYX40N250CHV technical specifications.
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXYX40N250CHV Datasheet
Download the complete datasheet for Littelfuse IXYX40N250CHV to view detailed technical specifications.
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