The LBAW56DW1T1G is a silicon rectifier diode with a maximum operating voltage of 70V and a maximum current of 200mA. It features a dual terminal configuration and operates within a temperature range of -55°C to 150°C. The diode is constructed from silicon and has a maximum power dissipation of 0.2W. It is packaged in a R-PDSO-G2 package type.
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Technical Specifications
LRC Leshan Radio LBAW56DW1T1G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 70 |
| Power Dissipation-Max | 0.2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
LRC Leshan Radio LBAW56DW1T1G Datasheet
Download the complete datasheet for LRC Leshan Radio LBAW56DW1T1G to view detailed technical specifications.
No datasheet is available for this part.