The S-LBAV199LT3G is a dual silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a maximum reverse voltage of 85 volts and a maximum power dissipation of 0.15 watts. The diode is packaged in a 3-pin R-PDSO-G3 package and features dual terminals. It is a general purpose rectifier diode made from silicon material.
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Technical Specifications
LRC Leshan Radio S-LBAV199LT3G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 85 |
| Power Dissipation-Max | 0.15 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
LRC Leshan Radio S-LBAV199LT3G Datasheet
Download the complete datasheet for LRC Leshan Radio S-LBAV199LT3G to view detailed technical specifications.
No datasheet is available for this part.