N-Channel RF Power Field-Effect Transistor designed for very high frequency band applications. This 1-element silicon Metal-oxide Semiconductor FET features a radial terminal position with 4 pins. It operates with a maximum temperature of 200°C.
Macom MRF171A technical specifications.
Download the complete datasheet for Macom MRF171A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.