The MCC MJD32C-TP is a PNP bipolar junction transistor with a maximum collector current of 3A and a maximum power dissipation of 1.25W. It has a collector-emitter breakdown voltage of 100V and a maximum operating temperature of 150°C. The transistor is packaged in a TO-252-3 surface mount package and is RoHS compliant. It has a gain bandwidth product of 3MHz and a transition frequency of 3MHz.
PackageTO-252-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
MCC MJD32C-TP technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 3MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
MCC MJD32C-TP Datasheet
Download the complete datasheet for MCC MJD32C-TP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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