NPN silicon bipolar junction transistor (BJT) in a TO-92 package. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Designed for through-hole mounting and operates within a temperature range of -55°C to 150°C. This RoHS compliant component has a maximum power dissipation of 625mW.
Frequency100MHz
PackageTO-92
MountingThrough Hole
PolarityNPN
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Technical Specifications
MCC MPSA06-AP technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
MCC MPSA06-AP Datasheet
Download the complete datasheet for MCC MPSA06-AP to view detailed technical specifications.
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