NPN bipolar junction transistor for general-purpose applications. Features a maximum collector-emitter voltage of 120V and a continuous collector current of 1.5A. This single-element silicon transistor is housed in a TO-126 package with three through-hole leads and a tab. It offers a maximum power dissipation of 1000mW and a typical transition frequency of 140MHz, operating within a temperature range of -55°C to 150°C.
PackageTO-126
MountingThrough Hole
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Technical Specifications
Micro Commercial Components 2SD669-B-BP technical specifications.
General
| Basic Package Type | Through Hole |
| Package/Case | TO-126 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 8.3(Max) |
| Package Width (mm) | 3.45(Max) |
| Package Height (mm) | 11.2(Max) |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 180V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 120V |
| Maximum DC Collector Current | 1.5A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 60@150mA@5V |
| Maximum Transition Frequency | 140(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 374W0 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Micro Commercial Components 2SD669-B-BP Datasheet
Download the complete datasheet for Micro Commercial Components 2SD669-B-BP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.