NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 120V and a maximum collector current of 1.5A. This single-element transistor is housed in a TO-126 package with 3 pins and a tab, offering a maximum power dissipation of 1000mW. Key electrical characteristics include a minimum DC current gain of 100 at 150mA/5V and a typical transition frequency of 140MHz. Operating temperature range spans from -55°C to 150°C.
PackageTO-126
MountingThrough Hole
Quick Jump:
Technical Specifications
Micro Commercial Components 2SD669-C technical specifications.
General
Basic Package Type
Through Hole
Package/Case
TO-126
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
8.3(Max)
Package Width (mm)
3.45(Max)
Package Height (mm)
11.2(Max)
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
180V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
120V
Maximum DC Collector Current
1.5A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
100@150mA@5V
Maximum Transition Frequency
140(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
374W0
EU RoHS
No
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micro Commercial Components 2SD669-C Datasheet
Download the complete datasheet for Micro Commercial Components 2SD669-C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.