
The 1N6628US/TR13 is a single switching diode from Microchip, packaged in an E-MELF case with no lead. It has a peak reverse repetitive voltage of 600V and a maximum continuous forward current of 1.75A. The diode features a peak non-repetitive surge current of 75A and a peak forward voltage of 1.5V at 4A. It also has a peak reverse current of 2A and a peak reverse recovery time of 45ns. The operating temperature range is -65 to 150 degrees Celsius.
Microchip 1N6628US/TR13 technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | MELF |
| Package/Case | E-MELF |
| Lead Shape | No Lead |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 5.72(Max) |
| Package Width (mm) | 3.76(Max) |
| Package Height (mm) | 3.76(Max) |
| Mounting | Surface Mount |
| Type | Switching Diode |
| Configuration | Single |
| Peak Reverse Repetitive Voltage | 600V |
| Maximum Continuous Forward Current | 1.75A |
| Peak Non-Repetitive Surge Current | 75A |
| Peak Forward Voltage | 1.5@4AV |
| Peak Reverse Current | 2uA |
| Peak Reverse Recovery Time | 45ns |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Operating Junction Temperature | -65 to 150°C |
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Microchip 1N6628US/TR13 to view detailed technical specifications.
No datasheet is available for this part.