PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 120V and a maximum DC collector current of 0.1A. This single-element, through-hole component is housed in a 3-pin TO-18 metal package (TO-206AA) with a maximum height of 5.33mm and diameter of 5.84mm. It offers a minimum DC current gain of 35 and a maximum transition frequency of 150MHz, operating across a temperature range of -65°C to 200°C.
PackageTO-18
MountingThrough Hole
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Technical Specifications
Microchip 2N3497 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-206-AA
Package/Case
TO-18
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Height (mm)
5.33(Max)
Package Diameter (mm)
5.84(Max)
Package Material
Metal
Mounting
Through Hole
Jedec
TO-206AA
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
120V
Maximum Emitter Base Voltage
4.5V
Maximum Collector-Emitter Voltage
120V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
600mW
Material
Si
Minimum DC Current Gain
35@100uA@10V|40@1mA@10V|40@10mA@10V|40@50mA@10V
Maximum Transition Frequency
150(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Compliance
Cage Code
60991
EU RoHS
No
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip 2N3497 Datasheet
Download the complete datasheet for Microchip 2N3497 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.