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Technical Specifications
Microchip APT1201R6SVR technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | Power MOS V |
| Maximum Drain Source Voltage | 1200V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 8A |
| Maximum Drain Source Resistance | 1600@10VmOhm |
| Typical Gate Charge @ Vgs | 155@10VnC |
| Typical Gate Charge @ 10V | 155nC |
| Typical Input Capacitance @ Vds | 3050@25VpF |
| Maximum Power Dissipation | 280000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Microchip APT1201R6SVR Datasheet
Download the complete datasheet for Microchip APT1201R6SVR to view detailed technical specifications.
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