
N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 6.2A continuous drain current. This single element transistor utilizes Power MOS 8 process technology and is housed in a TO-220 package with 3 pins and a tab, suitable for through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, 390mOhm drain-source resistance at 10V, and a typical gate charge of 55nC. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 37W.
Microchip APT15F50KF technical specifications.
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