N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 6.2A continuous drain current. This single element transistor utilizes Power MOS 8 process technology and is housed in a TO-220 package with 3 pins and a tab, suitable for through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, 390mOhm drain-source resistance at 10V, and a typical gate charge of 55nC. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 37W.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Microchip APT15F50KF technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.26(Max) |
| Package Width (mm) | 4.72(Max) |
| Package Height (mm) | 9.19(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | Power MOS 8 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6.2A |
| Material | Si |
| Maximum Drain Source Resistance | 390@10VmOhm |
| Typical Gate Charge @ Vgs | 55@10VnC |
| Typical Gate Charge @ 10V | 55nC |
| Typical Input Capacitance @ Vds | 2250@25VpF |
| Maximum Power Dissipation | 37000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Microchip APT15F50KF Datasheet
Download the complete datasheet for Microchip APT15F50KF to view detailed technical specifications.
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