N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 6.2A continuous drain current. This single element transistor utilizes Power MOS 8 process technology and is housed in a TO-220 package with 3 pins and a tab, suitable for through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, 390mOhm drain-source resistance at 10V, and a typical gate charge of 55nC. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 37W.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Microchip APT15F50KF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.26(Max)
Package Width (mm)
4.72(Max)
Package Height (mm)
9.19(Max)
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
Power MOS 8
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
6.2A
Material
Si
Maximum Drain Source Resistance
390@10VmOhm
Typical Gate Charge @ Vgs
55@10VnC
Typical Gate Charge @ 10V
55nC
Typical Input Capacitance @ Vds
2250@25VpF
Maximum Power Dissipation
37000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
60991
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Microchip APT15F50KF Datasheet
Download the complete datasheet for Microchip APT15F50KF to view detailed technical specifications.
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