N-channel Power MOSFET, 400V drain-source voltage, 23A continuous drain current. Features 200mΩ maximum drain-source resistance at 10V, 120nC typical gate charge at 10V, and 2650pF typical input capacitance at 25V. Housed in a 3-pin TO-247AD through-hole package with a maximum power dissipation of 250W. Operating temperature range from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Microchip APT4020BVFR technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
16.26(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
21.46(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AD
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
Power MOS V
Maximum Drain Source Voltage
400V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
23A
Maximum Drain Source Resistance
200@10VmOhm
Typical Gate Charge @ Vgs
120@10VnC
Typical Gate Charge @ 10V
120nC
Typical Input Capacitance @ Vds
2650@25VpF
Maximum Power Dissipation
250000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
60991
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip APT4020BVFR Datasheet
Download the complete datasheet for Microchip APT4020BVFR to view detailed technical specifications.
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