N-channel Power MOSFET featuring 400V drain-source voltage and 23A continuous drain current. This through-hole component utilizes Power MOS V technology and is housed in a TO-247 package with a single element configuration. Key specifications include a maximum gate-source voltage of ±30V and a low drain-source on-resistance of 200 mOhm at 10V. Maximum power dissipation is rated at 250W, with an operating temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Microchip APT4020BVFRG technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
16.26(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
21.46(Max)
Seated Plane Height (mm)
25.96(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AD
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
Power MOS V
Maximum Drain Source Voltage
400V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
23A
Maximum Drain Source Resistance
200@10VmOhm
Typical Gate Charge @ Vgs
120@10VnC
Typical Gate Charge @ 10V
120nC
Typical Input Capacitance @ Vds
2650@25VpF
Maximum Power Dissipation
250000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
60991
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip APT4020BVFRG Datasheet
Download the complete datasheet for Microchip APT4020BVFRG to view detailed technical specifications.
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