N-channel Power MOSFET, SOT-227 package, featuring 900V drain-source voltage and 60A continuous drain current. This single dual-source configured transistor offers a low drain-source on-resistance of 60mΩ at 10V. With a maximum power dissipation of 390W and a screw mounting type, it operates across a wide temperature range from -55°C to 150°C. Key electrical characteristics include a typical gate charge of 480nC and input capacitance of 14000pF.
PackageSOT-227
MountingScrew
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Technical Specifications
Microchip APT60N90JC3 technical specifications.
General
| Package Family Name | SOT |
| Package/Case | SOT-227 |
| Package Description | Small Outline Transistor |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 38.2(Max) |
| Package Width (mm) | 25.04(Max) |
| Package Height (mm) | 12.24(Max) |
| Mounting | Screw |
| Configuration | Single Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 60A |
| Maximum Drain Source Resistance | 60@10VmOhm |
| Typical Gate Charge @ Vgs | 480@10VnC |
| Typical Gate Charge @ 10V | 480nC |
| Typical Input Capacitance @ Vds | 14000@25VpF |
| Maximum Power Dissipation | 390000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Microchip APT60N90JC3 Datasheet
Download the complete datasheet for Microchip APT60N90JC3 to view detailed technical specifications.
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