N-channel enhancement mode power MOSFET featuring 650V drain-source voltage and 94A continuous drain current. This single-element transistor is housed in a T-MAX package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a low 35mOhm drain-source resistance at 10V, typical gate charge of 580nC at 10V, and a maximum power dissipation of 833W. Operating temperature range is -55°C to 150°C.
PackageT-MAX
MountingThrough Hole
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Technical Specifications
Microchip APT94N65B2C3G technical specifications.
General
| Package Family Name | T-MAX |
| Package/Case | T-MAX |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 16.26(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 21.46(Max) |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Jedec | TO-247AD |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 94A |
| Maximum Drain Source Resistance | 35@10VmOhm |
| Typical Gate Charge @ Vgs | 580@10VnC |
| Typical Gate Charge @ 10V | 580nC |
| Typical Input Capacitance @ Vds | 13940@25VpF |
| Maximum Power Dissipation | 833000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Microchip APT94N65B2C3G Datasheet
Download the complete datasheet for Microchip APT94N65B2C3G to view detailed technical specifications.
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