RF MOSFET N-Channel transistor, single enhancement mode, designed for high voltage applications. Features a maximum drain-source voltage of 1000V and a continuous drain current of 6.5A. Operates up to 65 MHz with a maximum power dissipation of 250W. Packaged in a TO-247 (3+Tab) through-hole configuration, offering a typical power gain of 15dB and output power of 150W. Operating temperature range from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
Power150W
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Technical Specifications
Microchip ARF461BG technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 16.26(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 21.46(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AD |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Maximum Continuous Drain Current | 6.5A |
| Maximum Frequency | 65MHz |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Power Gain | 15dB |
| Output Power | 150W |
| Typical Input Capacitance @ Vds | 1700@50VpF |
Compliance
| Cage Code | 60991 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Microchip ARF461BG Datasheet
Download the complete datasheet for Microchip ARF461BG to view detailed technical specifications.
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