N-Channel Power MOSFET, TO-252 package, featuring 250V drain-source breakdown voltage and 1.1A continuous drain current. Offers 3.5 ohm drain-source resistance (Rds On Max) and operates with a 20V gate-source voltage. Includes fast switching characteristics with 10ns turn-on and turn-off delay times, and a 20ns fall time. Input capacitance is 1nF, with operating temperatures ranging from -55°C to 150°C. This surface-mount component is supplied on tape and reel, with RoHS compliance.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Microchip DN2625K4-G technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.1A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
250V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1nF
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
3.5R
RoHS Compliant
Yes
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
Weight
0.139332oz
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN2625K4-G Datasheet
Download the complete datasheet for Microchip DN2625K4-G to view detailed technical specifications.
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