
N-Channel Power MOSFET, TO-252 package, featuring 250V drain-source breakdown voltage and 1.1A continuous drain current. Offers 3.5 ohm drain-source resistance (Rds On Max) and operates with a 20V gate-source voltage. Includes fast switching characteristics with 10ns turn-on and turn-off delay times, and a 20ns fall time. Input capacitance is 1nF, with operating temperatures ranging from -55°C to 150°C. This surface-mount component is supplied on tape and reel, with RoHS compliance.
Microchip DN2625K4-G technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1nF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.139332oz |
| Width | 6.1mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip DN2625K4-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
