
N-channel JFET with 350V drain-source breakdown voltage and 72mA continuous drain current. Features 35 Ohm drain-source resistance (Rds On Max) and 120pF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 360mW. Packaged in a SOT-23-3 surface mount case, this RoHS compliant component offers fast switching with 10ns turn-on and 15ns fall times.
Microchip DN3135K1-G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 72mA |
| Drain to Source Breakdown Voltage | 350V |
| Drain to Source Resistance | 35R |
| Drain to Source Voltage (Vdss) | 350V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Rds On Max | 35R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip DN3135K1-G to view detailed technical specifications.
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