N-channel JFET with 350V drain-source breakdown voltage and 72mA continuous drain current. Features 35 Ohm drain-source resistance (Rds On Max) and 120pF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 360mW. Packaged in a SOT-23-3 surface mount case, this RoHS compliant component offers fast switching with 10ns turn-on and 15ns fall times.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power360mW
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Technical Specifications
Microchip DN3135K1-G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
72mA
Drain to Source Breakdown Voltage
350V
Drain to Source Resistance
35R
Drain to Source Voltage (Vdss)
350V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
120pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Rds On Max
35R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN3135K1-G Datasheet
Download the complete datasheet for Microchip DN3135K1-G to view detailed technical specifications.
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