DN3525N8-G

N-CH MOSFET 250V 0.36A SOT-89 Surface Mount

N-channel Silicon MOSFET, 250V Drain to Source Breakdown Voltage, 360mA Continuous Drain Current, 6 Ohm Drain to Source Resistance. Features a SOT-89 package for surface mounting, with a maximum power dissipation of 1.6W. Operates across a temperature range of -55°C to 150°C, offering 20ns turn-on and 25ns fall times. This component is RoHS compliant and supplied in tape and reel packaging.

PackageSOT-89

MountingSurface Mount

PolarityN-CHANNEL

Power1.6W

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Technical Specifications

Microchip DN3525N8-G technical specifications.

General

Package/Case	SOT-89
Continuous Drain Current (ID)	360mA
Drain to Source Breakdown Voltage	250V
Drain to Source Resistance	6R
Drain to Source Voltage (Vdss)	250V
Fall Time	25ns
Gate to Source Voltage (Vgs)	20V
Height	1.6mm
Input Capacitance	350pF
Lead Free	Lead Free
Length	4.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.6W
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Package Quantity	2000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.6W
Radiation Hardening	No
Rds On Max	6R
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Turn-Off Delay Time	25ns
Turn-On Delay Time	20ns
Weight	0.001862oz
Width	2.6mm