NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features 80V collector-emitter voltage, 1A maximum collector current, and 800mW power dissipation. Housed in a 3-pin TO-39 metal package with a maximum height of 6.6mm and diameter of 9.4mm. Offers a wide operating temperature range from -65°C to 200°C.
PackageTO-39
MountingThrough Hole
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Technical Specifications
Microchip JANSM_2N3019S technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-205-AF |
| Package/Case | TO-39 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 140V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 800mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | No |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 3 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Microchip JANSM_2N3019S Datasheet
Download the complete datasheet for Microchip JANSM_2N3019S to view detailed technical specifications.
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