The JANSP_2N3019 is a TO-5 packaged NPN bipolar power transistor from Microchip. It has a maximum collector base voltage of 140V, a maximum collector-emitter voltage of 80V, and a maximum DC collector current of 1A. The device can dissipate up to 800mW of power and operates over a temperature range of -65°C to 200°C. It is suitable for use in through hole mounting applications.
PackageTO-5
MountingThrough Hole
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Technical Specifications
Microchip JANSP_2N3019 technical specifications.
General
| Package Family Name | TO-205-AA |
| Package/Case | TO-5 |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Package Diameter (mm) | 9.4(Max) |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 140V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 800mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | No |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 30 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Microchip JANSP_2N3019 Datasheet
Download the complete datasheet for Microchip JANSP_2N3019 to view detailed technical specifications.
No datasheet is available for this part.