N-channel Junction Field-Effect Transistor (JFET) in a TO-92 package. Features 500V drain-to-source breakdown voltage and 30mA continuous drain current. Offers 1kΩ drain-to-source resistance and 740mW maximum power dissipation. Operates across a -55°C to 150°C temperature range with a 20V gate-to-source voltage. Includes 90ns turn-on delay and 100ns turn-off delay.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power740mW
Quick Jump:
Technical Specifications
Microchip LND150N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
30mA
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1kR
Drain to Source Voltage (Vdss)
500V
Fall Time
450ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
10pF
Lead Free
Lead Free
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
740mW
Radiation Hardening
No
Rds On Max
1kR
Reach SVHC Compliant
Unknown
Turn-Off Delay Time
100ns
Turn-On Delay Time
90ns
Weight
0.00776oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip LND150N3-G Datasheet
Download the complete datasheet for Microchip LND150N3-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
