MICROCHIP

LND150N3-G

Datasheet

500V 30mA N-CH JFET TO-92 Small Signal Transistor

Microchip

LND150N3-G

Name: LND150N3-G Microchip
Brand: Microchip
SKU: LND150N3-G

500V 30mA N-CH JFET TO-92 Small Signal Transistor

N-channel Junction Field-Effect Transistor (JFET) in a TO-92 package. Features 500V drain-to-source breakdown voltage and 30mA continuous drain current. Offers 1kΩ drain-to-source resistance and 740mW maximum power dissipation. Operates across a -55°C to 150°C temperature range with a 20V gate-to-source voltage. Includes 90ns turn-on delay and 100ns turn-off delay.

PackageTO-92

MountingThrough Hole

PolarityN-CHANNEL

Power740mW

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Technical Specifications

Microchip LND150N3-G technical specifications.

General

Package/Case	TO-92
Continuous Drain Current (ID)	30mA
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	1kR
Drain to Source Voltage (Vdss)	500V
Fall Time	450ns
Gate to Source Voltage (Vgs)	20V
Height	5.33mm
Input Capacitance	10pF
Lead Free	Lead Free
Length	5.21mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	740mW
Mount	Through Hole
Number of Channels	1
Number of Elements	1
Package Quantity	1000
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	740mW
Radiation Hardening	No
Rds On Max	1kR
Reach SVHC Compliant	Unknown
Turn-Off Delay Time	100ns
Turn-On Delay Time	90ns
Weight	0.00776oz
Width	4.19mm