Dual 3A MOSFET gate driver, half-bridge configuration, operating from 4.5V to 18V supply. Features 65ns propagation delay and 30ns fall time, with a maximum output current of 3A. Packaged in a lead-free SOIC-8 surface-mount case, this integrated circuit offers a maximum power dissipation of 699mW and operates within a temperature range of -40°C to 125°C.
PackageSOIC
Current1.8mA
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Technical Specifications
Microchip MCP14E9-E/SN technical specifications.
General
Package/Case
SOIC
Fall Time
30ns
Height
0.059inch
Input Bias Current
10uA
Input Current
1uA
Lead Free
Lead Free
Length
0.192inch
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Output Current
3A
Max Power Dissipation
699mW
Max Supply Current
1.8mA
Max Supply Voltage
18V
Min Supply Voltage
4.5V
Number of Drivers
2
Number of Outputs
2
Output Current
3A
Output Voltage
18V
Package Quantity
100
Packaging
Rail/Tube
Propagation Delay
65ns
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Supply Current
1.8mA
Turn-On Delay Time
65ns
Width
0.154inch
Compliance
RoHS
Compliant
Datasheet
Microchip MCP14E9-E/SN Datasheet
Download the complete datasheet for Microchip MCP14E9-E/SN to view detailed technical specifications.
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