Dual 3A MOSFET gate driver, half-bridge configuration, operating from 4.5V to 18V supply. Features 65ns propagation delay and 30ns fall time, with a maximum output current of 3A. Packaged in a lead-free SOIC-8 surface-mount case, this integrated circuit offers a maximum power dissipation of 699mW and operates within a temperature range of -40°C to 125°C.
PackageSOIC
Current1.8mA
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Technical Specifications
Microchip MCP14E9-E/SN technical specifications.
General
| Package/Case | SOIC |
| Fall Time | 30ns |
| Height | 0.059inch |
| Input Bias Current | 10uA |
| Input Current | 1uA |
| Lead Free | Lead Free |
| Length | 0.192inch |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 3A |
| Max Power Dissipation | 699mW |
| Max Supply Current | 1.8mA |
| Max Supply Voltage | 18V |
| Min Supply Voltage | 4.5V |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Output Current | 3A |
| Output Voltage | 18V |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Propagation Delay | 65ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Supply Current | 1.8mA |
| Turn-On Delay Time | 65ns |
| Width | 0.154inch |
Compliance
| RoHS | Compliant |
Datasheet
Microchip MCP14E9-E/SN Datasheet
Download the complete datasheet for Microchip MCP14E9-E/SN to view detailed technical specifications.
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