The MPLAD15KP11AE3 is a single unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 11V and a minimum breakdown voltage of 12.2V. It has a maximum non-repetitive peak reverse power dissipation of 15000W and a maximum clamping voltage of 18.2V. The diode is packaged in a R-PSSO-G1 package type and is suitable for use in applications where high voltage suppression is required. The operating temperature range is not specified.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microchip MPLAD15KP11AE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 11 |
| Breakdown Voltage-Min | 12.2 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 18.2 |
| Breakdown Voltage-Nom | 12.85 |
| Breakdown Voltage-Max | 13.5 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microchip MPLAD15KP11AE3 Datasheet
Download the complete datasheet for Microchip MPLAD15KP11AE3 to view detailed technical specifications.
No datasheet is available for this part.