NPN RF transistor featuring a 45V maximum collector-emitter voltage and 0.2A maximum DC collector current. This single-element, silicon transistor is housed in a 4-pin Style M210 package with screw mounting. It offers a minimum DC current gain of 15 at 0.1A/5V, a typical output capacitance of 3.2pF, and a minimum output power of 1W with a typical power gain of 7dB. Operating temperature range spans from -65°C to 200°C.
PackageStyle M210
MountingScrew
Power1(Min)W
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Technical Specifications
Microchip MS3022 technical specifications.
General
Package/Case
Style M210
Pin Count
4
PCB
4
Package Length (mm)
20.57(Max)
Package Width (mm)
6.48(Max)
Package Height (mm)
4.75(Max)
Mounting
Screw
Material
Si
Type
NPN
Configuration
Single Dual Base
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
45V
Maximum Collector Base Voltage
45V
Maximum Emitter Base Voltage
3.5V
Maximum DC Collector Current
0.2A
Maximum Power Dissipation
7000mW
Maximum Junction Case Thermal Resistance
25°C/W
Minimum DC Current Gain
Minimum DC Current Gain Range
2 to 30
Typical Output Capacitance
3.2(Max)pF
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Output Power
1(Min)W
Typical Power Gain
7(Min)dB
Compliance
Cage Code
60991
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Microchip MS3022 Datasheet
Download the complete datasheet for Microchip MS3022 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.