NPN RF transistor featuring a 45V maximum collector-emitter voltage and 0.2A maximum DC collector current. This single-element, silicon transistor is housed in a 4-pin Style M210 package with screw mounting. It offers a minimum DC current gain of 15 at 0.1A/5V, a typical output capacitance of 3.2pF, and a minimum output power of 1W with a typical power gain of 7dB. Operating temperature range spans from -65°C to 200°C.
PackageStyle M210
MountingScrew
Power1(Min)W
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Technical Specifications
Microchip MS3022 technical specifications.
General
| Package/Case | Style M210 |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 20.57(Max) |
| Package Width (mm) | 6.48(Max) |
| Package Height (mm) | 4.75(Max) |
| Mounting | Screw |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Base |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 45V |
| Maximum Collector Base Voltage | 45V |
| Maximum Emitter Base Voltage | 3.5V |
| Maximum DC Collector Current | 0.2A |
| Maximum Power Dissipation | 7000mW |
| Maximum Junction Case Thermal Resistance | 25°C/W |
| Minimum DC Current Gain | [email protected]@5V |
| Minimum DC Current Gain Range | 2 to 30 |
| Typical Output Capacitance | 3.2(Max)pF |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Output Power | 1(Min)W |
| Typical Power Gain | 7(Min)dB |
Compliance
| Cage Code | 60991 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Microchip MS3022 Datasheet
Download the complete datasheet for Microchip MS3022 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.