N-channel Silicon Carbide MOSFET, 1200V breakdown voltage, 77A continuous drain current, and a low on-resistance of 0.031 ohms. This single-element power field-effect transistor utilizes Metal-oxide Semiconductor Field-Effect Transistor technology for efficient power switching applications.
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Technical Specifications
Microchip MSC025SMA120J technical specifications.
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Microchip MSC025SMA120J Datasheet
Download the complete datasheet for Microchip MSC025SMA120J to view detailed technical specifications.
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