This silicon transient voltage suppressor diode features a maximum reverse voltage of 26V and a minimum breakdown voltage of 28.9V. The device can handle a maximum non-repetitive peak reverse power dissipation of 15000W and a maximum clamping voltage of 42.1V. It is packaged in a R-PSSO-G1 package type and is suitable for use in a variety of applications.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microchip MXLPLAD15KP26ATR technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 26 |
| Breakdown Voltage-Min | 28.9 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 42.1 |
| Breakdown Voltage-Nom | 30.4 |
| Breakdown Voltage-Max | 31.9 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | No |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microchip MXLPLAD15KP26ATR Datasheet
Download the complete datasheet for Microchip MXLPLAD15KP26ATR to view detailed technical specifications.
No datasheet is available for this part.