This silicon transient voltage suppressor diode features a unidirectional polarity with a maximum reverse voltage of 30V and a minimum breakdown voltage of 33.3V. The device can handle a maximum non-repetitive peak reverse power dissipation of 15000W and a maximum clamping voltage of 48.4V. The nominal breakdown voltage is 35.05V, with a maximum breakdown voltage of 36.8V. The device is packaged in a R-PSSO-G1 package type.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microchip MXLPLAD15KP30AE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 33.3 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 48.4 |
| Breakdown Voltage-Nom | 35.05 |
| Breakdown Voltage-Max | 36.8 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microchip MXLPLAD15KP30AE3 Datasheet
Download the complete datasheet for Microchip MXLPLAD15KP30AE3 to view detailed technical specifications.
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